| PART |
Description |
Maker |
| M6MGT647M17AKT |
Memory>MCP(Multi Chip Package)>S-µMCP(Stacked micro MCP)
|
Renesas
|
| M6MGT647M34CKT M6MGB647M34CKT |
Memory>MCP(Multi Chip Package)>S-µMCP(Stacked micro MCP)
|
Renesas
|
| S75WS256NDFBFWLJ3 S75WS256NDFBAWLK2 S75WS256NDFBFW |
Stacked Multi-Chip Product (MCP) 堆叠式多芯片产品（MCP
Stacked Multi-Chip Product (MCP) SPECIALTY MEMORY CIRCUIT, PBGA84
|
Spansion, Inc.
SPANSION LLC
|
| AM50DLI28BG AM50DL128BG |
Am50DL128BG - Stacked Multi-Chip Package (MCP) Flash Memory and SRAM Am50DL128BG -堆叠式多芯片封装（MCP）闪存和SRAM
|
Advanced Micro Devices, Inc.
Spansion, Inc.
|
| DS42553 AM29DL323D |
Stacked Multi-Chip Package (MCP) Flash Memory and SRAM
MCP Flash Memory and SRAM
|
AMD[Advanced Micro Devices]
|
| AM70PDL127CDH66IT AM70PDL127CDH85IS AM70PDL127CDH8 |
Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) 堆叠式多芯片封装（MCP / XIP）的快闪记忆体，数据存储的MirrorBit闪存和移动存储芯片（XIP）的
Stacked Multi-Chip Package (MCP/XIP) Flash Memory, Data storage MirrorBit Flash, and pSRAM (XIP) SPECIALTY MEMORY CIRCUIT, PBGA93
2 x 64 Megabit (8 M x 16-Bit) CMOS 3.0 Volt-Only Page Mode Flash Memory Data Storage 128 Megabit (8 M x 16-Bit) CMOS 2 × 64兆位米16位）的CMOS 3.0伏特，只有页面模式闪存数据存28兆位米16位）的CMOS
|
Spansion Inc.
Spansion, Inc.
|
| S71GL032A40BFI0B2 S71GL064A80BAI0B3 S71GL064A80BAI |
Stacked Multi-Chip Product (MCP) Flash Memory and RAM SPECIALTY MEMORY CIRCUIT, PBGA56
DIODE ZENER 200MW 5.1V 1005 SPECIALTY MEMORY CIRCUIT, PBGA56
DIODE ZENER 200MW 9.1V 1005 SPECIALTY MEMORY CIRCUIT, PBGA56
Stacked Multi-Chip Product (MCP) Flash Memory and RAM 堆叠式多芯片产品（MCP）的闪存和RAM
DIODE ZENER 200MW 4.7V 1005
INDUCTOR POWER 3.3UH 5.4A SMD
INDUCTOR,TOROID,HORIZONTAL, 22.0 uH,7.0 IDC,0.015 OHM,
|
Spansion, Inc.
Spansion Inc.
|
| K524G2GACB-A050 |
MCP MEMORY
|
Samsung semiconductor
|
| K5A3380YTC-T755 K5A3380YBC-T755 K5A3280YTC-T855 K5 |
MCP MEMORY
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
|
